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N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 11A, PD: 134W, fetures, applications, TO-252, YJD11C65MJ

Name: N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 11A, PD: 134W, fetures, applications, TO-252, YJD11C65MJ
Brand: Dongguan Merry Electronic Co., Ltd.
SKU: dEQrBOgYJVRf
Price: 0.79 USD
Availability: InStock

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 11A, PD: 134W, fetures, applications, TO-252, YJD11C65MJ pictures & photos

Certification:	RoHS
Function:	Switch Transistor
Encapsulation Structure:	TO-252
Material:	Silicon
Features1:	Extremely Low Switching Loss
Features2:	Excellent Stability and Uniformity

Customization:	Available \| Customized Request

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