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  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 5A, PD: 62.5W, fetures, applications, ITO-220AB, YJF05N65HX
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 5A, PD: 62.5W, fetures, applications, ITO-220AB, YJF05N65HX
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 5A, PD: 62.5W, fetures, applications, ITO-220AB, YJF05N65HX
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 5A, PD: 62.5W, fetures, applications, ITO-220AB, YJF05N65HX
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 5A, PD: 62.5W, fetures, applications, ITO-220AB, YJF05N65HX
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 650V, ID: 5A, PD: 62.5W, fetures, applications, ITO-220AB, YJF05N65HX
Certification: RoHS
Function: Switch Transistor
Encapsulation Structure: ITO-220AB
Material: Silicon
Features1: Extremely Low Switching Loss
Features2: Excellent Stability and Uniformity
Customization:

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