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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 66A RDS(on) 33mΩ TO-247AB Fetures Applications YJD212040NCTG2Q

Name: Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 66A RDS(on) 33mΩ TO-247AB Fetures Applications YJD212040NCTG2Q
Brand: Dongguan Merry Electronic Co., Ltd.
SKU: UndRhrBoHaYN
Price: 0.78 USD
Availability: InStock

Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 66A RDS(on) 33mΩ TO-247AB Fetures Applications YJD212040NCTG2Q pictures & photos

Certification:	RoHS
Function:	Switch Transistor
Encapsulation Structure:	TO-247AB
Material:	Silicon
Features1:	Extremely Low Switching Loss
Features2:	Excellent Stability and Uniformity

Customization:	Available \| Customized Request

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