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  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 0.2A, PD: 0.35W, fetures, applications, SOT-523, BSS123E
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 0.2A, PD: 0.35W, fetures, applications, SOT-523, BSS123E
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 0.2A, PD: 0.35W, fetures, applications, SOT-523, BSS123E
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 0.2A, PD: 0.35W, fetures, applications, SOT-523, BSS123E
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 0.2A, PD: 0.35W, fetures, applications, SOT-523, BSS123E
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 0.2A, PD: 0.35W, fetures, applications, SOT-523, BSS123E
Certification: RoHS
Function: Switch Transistor
Encapsulation Structure: SOT-235
Material: Silicon
Features1: Extremely Low Switching Loss
Features2: Excellent Stability and Uniformity
Customization:

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