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  • Ideal for automated placement Bridge Rectifiers , VRM: 200V, Io: 0.8A, IFSM: 35A, fetures, applications, MBLS, RMBL2S THRU RMBL10S
  • Ideal for automated placement Bridge Rectifiers , VRM: 200V, Io: 0.8A, IFSM: 35A, fetures, applications, MBLS, RMBL2S THRU RMBL10S
  • Ideal for automated placement Bridge Rectifiers , VRM: 200V, Io: 0.8A, IFSM: 35A, fetures, applications, MBLS, RMBL2S THRU RMBL10S
  • Ideal for automated placement Bridge Rectifiers , VRM: 200V, Io: 0.8A, IFSM: 35A, fetures, applications, MBLS, RMBL2S THRU RMBL10S
  • Ideal for automated placement Bridge Rectifiers , VRM: 200V, Io: 0.8A, IFSM: 35A, fetures, applications, MBLS, RMBL2S THRU RMBL10S
  • Ideal for automated placement Bridge Rectifiers , VRM: 200V, Io: 0.8A, IFSM: 35A, fetures, applications, MBLS, RMBL2S THRU RMBL10S
Certification: RoHS
Function: Switch Transistor
Encapsulation Structure: MBLS
Material: Silicon
Features1: Extremely Low Switching Loss
Features2: Excellent Stability and Uniformity
Customization:

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