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  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 600V, ID: 33A, PD: 250W, fetures, applications, TOLL, YJT33C60HJ
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 600V, ID: 33A, PD: 250W, fetures, applications, TOLL, YJT33C60HJ
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 600V, ID: 33A, PD: 250W, fetures, applications, TOLL, YJT33C60HJ
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 600V, ID: 33A, PD: 250W, fetures, applications, TOLL, YJT33C60HJ
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 600V, ID: 33A, PD: 250W, fetures, applications, TOLL, YJT33C60HJ
  • N-Channel Enhancement Mode Field Effect Transistor, VDSS: 600V, ID: 33A, PD: 250W, fetures, applications, TOLL, YJT33C60HJ
Certification: RoHS
Function: Switch Transistor
Encapsulation Structure: TOLL
Material: Silicon
Features1: Extremely Low Switching Loss
Features2: Excellent Stability and Uniformity
Customization:

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