Customization: | Available |
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Encapsulation Structure: | TO-263 |
Application: | Motor Drives,UPS,DC-DC Converter |
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Description
These N-Channel enhancement mode power field effect transistors are using shielded gate trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
85V,110A,RDS(on).max=5.2mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
Applications
Motor Drives
UPS
DC-DC Converter
Product Summary
Vdss | 85V |
RDS(on).max@ VGS=10V | 5.2mΩ |
Id | 110A |
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