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Dongguan Merry Electronic Co., Ltd.
Guangdong, China
Main Products:
Diode , Transistor , Mosfet , Bridge , IC , Integrated Circuits , Microcontroller , Schottky ...
Address:
Floor 3, Block, 5 Number. 2 Waltai Road, Wanjiang District, Dongguan, Guangdong, China
Main Markets:
North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms):
FOB, EXW
Terms of Payment:
LC, T/T
Average Lead Time:
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
OEM/ODM Service
Sample Available
Visit My Factory
Secured Trading Service
Rating:
5.0/5

Diode, Transistor, Mosfet manufacturer / supplier in China, offering 3000V/200A Thyristor/Diode Module, T3, MT200CB30T3, 3600V/160A Thyristor/Diode Module, AT2, MT160CB36AT2, 40 Amp Schottky Barrier Rectifiers MBR40100 and so on.

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Silicon Carbide Mosfet

Total 49 Silicon Carbide Mosfet Products
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 40mΩ TO-247AB Fetures Applications YJD212040NCTGH2Q
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 40mΩ TO-247AB Fetures Applications YJD212040NCTGH2Q
FOB Price: US $0.791 / Piece
Min. Order: 1,000 Pieces
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High-frequency operation Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247AB Fetures Applications YJD212060NCTGHQ
High-frequency operation Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247AB Fetures Applications YJD212060NCTGHQ
FOB Price: US $0.79 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):33A / RDS(on): 80mΩ / TO-247-4L Fetures Applications YJD212080NCFGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):33A / RDS(on): 80mΩ / TO-247-4L Fetures Applications YJD212080NCFGHQ
FOB Price: US $0.78 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):38A / RDS(on): 80mΩ / TO-247-AB Fetures Applications YJD212080NCTG1Q
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):38A / RDS(on): 80mΩ / TO-247-AB Fetures Applications YJD212080NCTG1Q
FOB Price: US $0.78 / Piece
Min. Order: 1,000 Pieces
Contact Now
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-1200V / ID(25°C)-39A / RDS(on)- 80mΩ / TO-247-4L Fetures Applications YJD212080NCFG1Q
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-1200V / ID(25°C)-39A / RDS(on)- 80mΩ / TO-247-4L Fetures Applications YJD212080NCFG1Q
FOB Price: US $0.78 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):21A / RDS(on): 160mΩ / TO-247-AB Fetures Applications YJD2120160NCTG1Q
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):21A / RDS(on): 160mΩ / TO-247-AB Fetures Applications YJD2120160NCTG1Q
FOB Price: US $0.83 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):33A / RDS(on): 80mΩ / TO-247-AB Fetures Applications YJD212080NCTGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):33A / RDS(on): 80mΩ / TO-247-AB Fetures Applications YJD212080NCTGHQ
FOB Price: US $0.79 / Piece
Min. Order: 1,000 Pieces
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New tech Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1700V / ID(25°C):55A / RDS(on): 45mΩ / TO-247-4L Fetures Applications YJD217045NCFGHQ
New tech Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1700V / ID(25°C):55A / RDS(on): 45mΩ / TO-247-4L Fetures Applications YJD217045NCFGHQ
FOB Price: US $0.76 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):21A / RDS(on): 160mΩ / TO-247-4L Fetures Applications YJD2120160NCFG1Q
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1200V / ID(25°C):21A / RDS(on): 160mΩ / TO-247-4L Fetures Applications YJD2120160NCFG1Q
FOB Price: US $0.82 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1700V / ID(25°C):55A / RDS(on): 45mΩ / TO-247-AB Fetures Applications YJD217045NCTGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS:1700V / ID(25°C):55A / RDS(on): 45mΩ / TO-247-AB Fetures Applications YJD217045NCTGHQ
FOB Price: US $0.81 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 60A RDS(on) 50mΩ TO-247AB Fetures Applications YJD206550NCTGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 60A RDS(on) 50mΩ TO-247AB Fetures Applications YJD206550NCTGHQ
FOB Price: US $0.73 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 37A RDS(on) 60mΩ TO-247AB Fetures Applications YJD206560NCTG1Q
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 37A RDS(on) 60mΩ TO-247AB Fetures Applications YJD206560NCTG1Q
FOB Price: US $0.71 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Schottky MOSFET (N-Channel Enhancement) VDS-1200V ID(25°C)-24A RDS(on) -120mΩ / TO-263 Fetures Applications YJD2120120BGHQ
Silicon Carbide Schottky MOSFET (N-Channel Enhancement) VDS-1200V ID(25°C)-24A RDS(on) -120mΩ / TO-263 Fetures Applications YJD2120120BGHQ
FOB Price: US $0.78 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 24A RDS(on) 120mΩ TO-247AB Fetures Applications YJD2120120NCTGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 24A RDS(on) 120mΩ TO-247AB Fetures Applications YJD2120120NCTGHQ
FOB Price: US $0.75 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-247-4L Fetures Applications YJD212030NCFGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-247-4L Fetures Applications YJD212030NCFGHQ
FOB Price: US $0.81 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 30mΩ TO-247AB Fetures Applications YJD212030NCTGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 30mΩ TO-247AB Fetures Applications YJD212030NCTGHQ
FOB Price: US $0.75 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-1700V / ID)25°C)- 4.2A / RDS(on)-1Ω  TO-247-4L Fetures Applications YJD21701K0NCFGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-1700V / ID)25°C)- 4.2A / RDS(on)-1Ω  TO-247-4L Fetures Applications YJD21701K0NCFGHQ
FOB Price: US $0.71 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD2120120B7GHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD2120120B7GHQ
FOB Price: US $0.82 / Piece
Min. Order: 1,000 Pieces
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Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-247-4L Fetures Applications YJD2120120NCFGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) High blocking voltage TO-247-4L Fetures Applications YJD2120120NCFGHQ
FOB Price: US $0.71 / Piece
Min. Order: 1,000 Pieces
Contact Now
Video
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Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 60A RDS(on) 60mΩ TO-247AB Fetures Applications YJD206560NCTGHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 60A RDS(on) 60mΩ TO-247AB Fetures Applications YJD206560NCTGHQ
FOB Price: US $0.79 / Piece
Min. Order: 1,000 Pieces
Contact Now
Video
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Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD21701K0B7GHQ
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD21701K0B7GHQ
FOB Price: US $0.79 / Piece
Min. Order: 1,000 Pieces
Contact Now
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Silicon Carbide Schottky MOSFET (N-Channel Enhancement) VDS-1700V ID(25°C)-4.7A RDS(on) -1mΩ / TO-263 Fetures Applications YJD21701K0BGHQ
Silicon Carbide Schottky MOSFET (N-Channel Enhancement) VDS-1700V ID(25°C)-4.7A RDS(on) -1mΩ / TO-263 Fetures Applications YJD21701K0BGHQ
FOB Price: US $0.77 / Piece
Min. Order: 1,000 Pieces
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650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-263-7L, YJD2065100B7GH
650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-263-7L, YJD2065100B7GH
FOB Price: US $0.95 / Piece
Min. Order: 1,000 Pieces
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650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-220-3L, YJD2065100PGH
650V/32A/100mΩ, Silicon Carbide Power MOSFET, TO-220-3L, YJD2065100PGH
FOB Price: US $0.92 / Piece
Min. Order: 1,000 Pieces
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